Details

---

BUY STE38NA50 https://www.utsource.net/itm/p/6528358.html
N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	V(BR)DSS	-	500	-	V	Drain-source breakdown voltage
Continuous Drain Current	ID	-	-	10	A	Continuous drain current at Tc=25°C
Pulse Drain Current	Ibm	-	36	-	A	Pulse drain current (t=10ms, Rg=1Ω)
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Gate threshold voltage
On-State Resistance	RDS(on)	-	0.18	-	Ω	On-state resistance at VGS=10V, ID=1A
Input Capacitance	Ciss	-	1900	-	pF	Input capacitance
Output Capacitance	Coss	-	670	-	pF	Output capacitance
Reverse Transfer Capacitance	Crss	-	560	-	pF	Reverse transfer capacitance
Total Gate Charge	Qg	-	76	-	nC	Total gate charge

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to prevent damage from electrostatic discharge (ESD).
   • Mount the device on a heat sink if operating near maximum power dissipation.

2. Biasing and Operation:

   • Apply gate voltages within specified limits to avoid exceeding gate threshold levels.
   • Ensure that the drain-source voltage does not exceed the breakdown voltage limit.

3. Thermal Considerations:

   • Monitor junction temperature to stay within safe operating limits.
   • Use appropriate cooling methods if necessary.

4. Pulse Operation:

   • For pulse applications, ensure that the pulse width and frequency do not cause excessive heating or exceed the pulse current rating.

5. Storage and Packaging:

   • Store in original packaging in a dry environment.
   • Follow anti-static precautions during storage and transport.

6. Testing:

   • Perform initial testing under controlled conditions to validate performance parameters.
   • Regularly inspect connections and mounting to ensure reliability.

7. Safety Precautions:

   • Always follow safety guidelines when working with high voltages.
   • Ensure adequate ventilation and grounding of equipment.

(For reference only)