Details

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BUY TSD33N50V https://www.utsource.net/itm/p/6528363.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS			500	V	Maximum drain-source voltage
Gate-Source Voltage	VGS	-10		20	V	Maximum gate-source voltage
Continuous Drain Current	ID		33		A	Continuous drain current at 25°C
Pulse Drain Current	Ipp		120		A	Pulse drain current (8μs, 1% duty)
Power Dissipation	PD			260	W	Maximum power dissipation
Junction Temperature	Tj	-55		175	°C	Operating junction temperature range
Storage Temperature	Tstg	-55		175	°C	Storage temperature range

Instructions for Use:

1. Installation and Handling:

   • Handle the TSD33N50V with care to avoid damage to the leads or body.
   • Ensure proper heat sinking to manage thermal performance.

2. Electrical Connections:

   • Connect the drain terminal to the high voltage side of your circuit.
   • The source terminal should be connected to the low voltage side.
   • Apply the gate voltage relative to the source terminal to control the switching.

3. Thermal Management:

   • Ensure adequate cooling, especially if operating near maximum current ratings.
   • Use a heatsink or other cooling methods as necessary to keep the junction temperature within specified limits.

4. Gate Drive Considerations:

   • Provide sufficient gate drive voltage to fully enhance the MOSFET.
   • Be cautious of the maximum allowable gate-source voltage to prevent damage.

5. Pulse Operation:

   • For pulse operation, ensure that pulse width and duty cycle do not exceed datasheet specifications to avoid overheating.

6. Storage and Environment:

   • Store in a dry environment within the specified storage temperature range.
   • Protect from electrostatic discharge (ESD) during handling.

Refer to the manufacturer's datasheet for detailed specifications and additional guidelines.

(For reference only)