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BUY MG150J2YS1 https://www.utsource.net/itm/p/6528388.html
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Parameter | Description | Value |
---|---|---|
Part Number | Full part number of the device | MG150J2YS1 |
Type | Type of the component | MOSFET |
Package | Package type | TO-220 |
VDS (Max) | Maximum Drain-to-Source Voltage | 150 V |
RDS(on) (Typ) | On-State Resistance at 25°C, VGS = 10V | 0.04 Ω |
ID (Max) | Maximum Drain Current at 25°C | 50 A |
Power Dissipation | Maximum Power Dissipation | 125 W |
Operating Temp. | Operating Temperature Range | -55°C to +150°C |
Storage Temp. | Storage Temperature Range | -65°C to +175°C |
Gate Charge | Total Gate Charge | 80 nC |
Input Capacitance | Input Capacitance | 1300 pF |
Output Capacitance | Output Capacitance | 250 pF |
Instructions:
- Handling Precautions: Handle with care to avoid damage to the leads and body. Use appropriate anti-static precautions.
- Mounting: Ensure proper heat sinking for maximum power dissipation. Follow manufacturer guidelines for mounting torque and thermal interface materials.
- Soldering: Use a soldering temperature not exceeding 260°C for no more than 10 seconds per operation. Allow adequate cooling between operations.
- Testing: Perform initial testing under controlled conditions to verify correct operation before deployment in final applications.
- Storage: Store in a dry, cool place away from direct sunlight and sources of heat or moisture.
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