Details

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BUY MG150J2YS1 https://www.utsource.net/itm/p/6528388.html
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description	Value
Part Number	Full part number of the device	MG150J2YS1
Type	Type of the component	MOSFET
Package	Package type	TO-220
VDS (Max)	Maximum Drain-to-Source Voltage	150 V
RDS(on) (Typ)	On-State Resistance at 25掳C, VGS = 10V	0.04 惟
ID (Max)	Maximum Drain Current at 25掳C	50 A
Power Dissipation	Maximum Power Dissipation	125 W
Operating Temp.	Operating Temperature Range	-55掳C to +150掳C
Storage Temp.	Storage Temperature Range	-65掳C to +175掳C
Gate Charge	Total Gate Charge	80 nC
Input Capacitance	Input Capacitance	1300 pF
Output Capacitance	Output Capacitance	250 pF

Instructions:

1. Handling Precautions: Handle with care to avoid damage to the leads and body. Use appropriate anti-static precautions.
2. Mounting: Ensure proper heat sinking for maximum power dissipation. Follow manufacturer guidelines for mounting torque and thermal interface materials.
3. Soldering: Use a soldering temperature not exceeding 260掳C for no more than 10 seconds per operation. Allow adequate cooling between operations.
4. Testing: Perform initial testing under controlled conditions to verify correct operation before deployment in final applications.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat or moisture.

(For reference only)