Details

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BUY MG200Q2YS40 https://www.utsource.net/itm/p/6528406.html

Parameter	Description
Part Number	MG200Q2YS40
Type	MOSFET - Metal-Oxide-Semiconductor Field-Effect Transistor
Configuration	N-Channel
Drain Source Voltage	Vds = 200V
Continuous Drain Current	Id = 16A (at 25°C)
Pulse Drain Current	Idm = 80A (t < 10ms, at 25°C)
Gate Source Voltage	Vgs = ±20V
Input Capacitance	Ciss = 1790pF (at Vds=20V, f=1MHz)
Output Capacitance	Coss = 300pF (at Vds=20V, f=1MHz)
Reverse Transfer Capacitance	Crss = 220pF (at Vds=20V, f=1MHz)
Total Power Dissipation	Ptot = 160W (with appropriate heatsink)
Junction Temperature	Tj = -55°C to +150°C
Storage Temperature	Tstg = -55°C to +150°C
Package	TO-247

Instructions:

1. Installation and Handling:

   • Handle the device with care to avoid damage to the leads or body.
   • Ensure proper grounding during handling to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Use an appropriate heatsink for optimal heat dissipation if operating near maximum power ratings.
   • Follow manufacturer guidelines for mounting torque specifications on screws.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure that the operating temperature stays within the specified range to maintain reliability.

4. Testing and Troubleshooting:

   • When testing the device, use a suitable test setup that does not exceed the device's maximum ratings.
   • Monitor the device’s temperature during operation to ensure it remains within safe limits.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep in original packaging until ready to use to protect against ESD.

(For reference only)