Details

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BUY TE30N50E https://www.utsource.net/itm/p/6528489.html
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

Parameter	Description	Value	Unit
Part Number	Device Identifier	TE30N50E	-
Type	Device Type	N-Channel MOSFET	-
VDS	Drain-to-Source Voltage	50	V
ID	Continuous Drain Current	30	A
PD	Total Power Dissipation	125	W
RDS(on)	On-State Resistance at 25掳C	6.5	m惟
VGS(th)	Gate Threshold Voltage	2.5 to 4.5	V
Qg	Total Gate Charge	79	nC
EAS	Avalanche Energy	3.8	J
SOA	Safe Operating Area	Refer to Datasheet	-
Package	Encapsulation Type	TO-220	-
Operating Temp	Junction Temperature Range	-55 to 150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the TE30N50E with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.

2. Mounting:

   • Ensure that the device is securely mounted on a heatsink if operating near its maximum power dissipation limits.

3. Biasing and Drive:

   • Apply gate voltages within the specified range to prevent gate oxide damage. Ensure the gate drive circuitry can supply sufficient current to charge and discharge the gate capacitance quickly.

4. Thermal Considerations:

   • Monitor junction temperature during operation. Exceeding the maximum junction temperature can lead to device failure.

5. Safe Operating Area (SOA):

   • Check the SOA graph in the datasheet to ensure the device operates within safe limits, especially under transient conditions.

6. Storage:

   • Store in a dry environment and observe the moisture sensitivity level (MSL) guidelines provided in the datasheet.

Refer to the full datasheet for detailed specifications and application notes.

(For reference only)