Details

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BUY APT60GT60JR https://www.utsource.net/itm/p/6528512.html
The Thunderbolt IGBT? is a new generation of high voltage power IGBTs.

Parameter	Description
Part Number	APT60GT60JR
Type	MOSFET
Configuration	N-Channel
VDS (V)	600
RDS(on) (m惟)	60 @ VGS = 10V
ID (A)	38.5 (Pulsed), 29 (Continuous)
Power Dissipation	240 W
Package Type	TO-247
Operating Temp.	-55掳C to +175掳C
Gate Charge (Qg)	130 nC
Input Capacitance	2070 pF

Instructions for Use:

1. Installation: Ensure that the device is installed in a well-ventilated area to facilitate heat dissipation, especially given its high power dissipation capability.
2. Heat Sinking: For continuous operation at high currents, use an appropriate heatsink to maintain the junction temperature within safe operating limits.
3. Gate Drive Voltage: Operate the gate with a voltage of at least 10V to ensure low RDS(on). Lower gate voltages will increase on-resistance and reduce efficiency.
4. Storage Conditions: Store in a dry environment away from direct sunlight and sources of heat.
5. Electrostatic Sensitivity: Handle with care as the device is sensitive to electrostatic discharge (ESD); use proper ESD protection measures during handling and installation.
6. Mounting Torque: Follow the manufacturer's guidelines for mounting torque specifications to avoid damaging the package.

(For reference only)