Details
BUY MUBW50-12T8 https://www.utsource.net/itm/p/6528539.html
| Parameter | Description | Value |
|---|---|---|
| Part Number | Unique identifier for the component | MUBW50-12T8 |
| Type | Type of device | MOSFET |
| Configuration | Channel type | N-Channel |
| Package | Physical package type | TO-263 |
| VDS (V) | Drain-source voltage | 50V |
| ID (A) | Continuous drain current | 12A |
| PD (W) | Power dissipation | 74W |
| RDS(on) (m惟) | On-state resistance at specified conditions | 8m惟 |
| VGS(th) (V) | Gate threshold voltage | 2.5V to 4.5V |
| Qg (nC) | Total gate charge | 60nC |
| Fmax (MHz) | Maximum frequency of operation | 5MHz |
| TJ (掳C) | Junction temperature range | -55掳C to 150掳C |
| Storage Temp. (掳C) | Temperature range for storage | -55掳C to 150掳C |
Instructions for Use:
- Handling Precautions: The MUBW50-12T8 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
- Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
- Biasing: Apply gate voltages within the specified VGS(th) range to ensure reliable switching performance.
- Operating Conditions: Do not exceed the maximum ratings listed in the parameter table under any circumstances.
- Storage and Handling: Store in a dry, cool environment and handle by the edges to avoid damage to the leads or body.
- Testing: Perform initial testing under controlled conditions to verify the device meets application requirements before full-scale deployment.
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