Details

---

BUY E180N10 https://www.utsource.net/itm/p/6528542.html
1.0 WATT SURMETIC 30 SILICON ZENER DIODES

Parameter	Value	Unit
Type	N-channel MOSFET	-
Drain-Source Voltage (VDS)	100	V
Gate-Source Voltage (VGS)	卤20	V
Continuous Drain Current (ID)	10	A
Pulse Drain Current (IDM)	35	A
Power Dissipation (PD)	40	W
Junction Temperature (TJ)	-55 to +150	掳C
Storage Temperature (TSTG)	-55 to +150	掳C

Instructions for Use:

1. Handling Precautions: E180N10 is sensitive to electrostatic discharge (ESD). Handle with care and use proper anti-static precautions.
2. Mounting: Ensure that the device is securely mounted on a heatsink if operating near maximum power dissipation to maintain safe junction temperatures.
3. Gate Drive: Apply gate voltages within the specified limits to avoid damage. Ensure that the gate drive circuitry can provide sufficient current during switching transitions.
4. Drain Current: Do not exceed the continuous or pulse drain current ratings. Pay attention to duty cycle and frequency in pulse applications.
5. Temperature Monitoring: Monitor the temperature of the device, especially under heavy loads, to ensure it stays within the operational range.
6. Storage Conditions: Store in a dry, cool place away from direct sunlight and sources of heat. Follow the storage temperature guidelines to prevent damage.
7. Soldering: If soldering, do not exceed the recommended soldering temperature and time to prevent thermal damage to the device.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)