PM100RSA060

PM100RSA060


Specifications
SKU
6528565
Details

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FLAT-BASE TYPE INSULATED PACKAGE
Parameter Description Value Unit
Part Number Product identifier PM100RSA060 -
Type Device type MOSFET -
Package Package type TO-220 -
VDS Drain-source voltage 100 V
ID Continuous drain current 6.0 A
PD Total power dissipation 100 W
RDS(on) On-state resistance at VGS = 10V 0.06
VGS(th) Gate threshold voltage 2.0 to 4.0 V
TJ Junction temperature range -55 to 150 掳C
SOA Safe operating area Refer to datasheet -

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the device to static electricity; use anti-static precautions.
    • Handle with care to avoid damage to the leads and package.
  2. Mounting:

    • Ensure proper alignment of the device during mounting.
    • Torque screws according to manufacturer specifications to prevent damage.
  3. Electrical Connections:

    • Verify all connections are secure and correct before applying power.
    • Ensure the gate drive circuitry is properly designed to avoid excessive gate-source voltage.
  4. Thermal Management:

    • Provide adequate heat sinking to maintain junction temperature within specified limits.
    • Monitor operating temperatures, especially under high load conditions.
  5. Storage:

    • Store in a dry, cool environment away from direct sunlight.
    • Keep in original packaging until ready for use to protect against ESD.
  6. Testing:

    • Perform initial testing at low power levels to ensure proper operation.
    • Follow recommended test procedures as outlined in the datasheet.
  7. Application Notes:

    • Refer to the application notes provided by the manufacturer for detailed guidance on specific applications.
    • Consider environmental factors such as humidity and vibration when designing circuits.
(For reference only)

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