Details

---

BUY IXFN73N30Q https://www.utsource.net/itm/p/6528575.html
HiPerFET Power MOSFETs Q-Class

Parameter	Symbol	Value	Unit	Conditions/Notes
Maximum Drain Voltage	VDSS	30	V	Maximum voltage between drain and source with gate shorted to source
Maximum Gate Source Volt.	VGS	±20	V	Maximum voltage between gate and source
Continuous Drain Current	ID	73	A	At Tc = 25°C, Ta = 25°C
Pulse Drain Current	Ipp	180	A	Pulse width ≤ 10 ms, duty cycle ≤ 1%
Total Power Dissipation	PD	260	W	At Tc = 25°C
Junction Temperature	Tj	-55 to +150	°C	Operating junction temperature range
Storage Temperature	Tstg	-55 to +150	°C	Storage and handling temperature range

Instructions for IXFN73N30Q

1. Handling Precautions:

   • The IXFN73N30Q is an electrostatic discharge (ESD) sensitive device. Handle with care using ESD-safe procedures.
   • Avoid exposing the device to excessive moisture or humidity.

2. Mounting and Assembly:

   • Ensure proper heat sinking when operating at high currents to maintain safe operating temperatures.
   • Follow manufacturer guidelines for soldering profiles to prevent damage during assembly.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • For reliable operation, ensure that the junction temperature remains within specified limits.

4. Testing and Troubleshooting:

   • Use appropriate test equipment and methods to avoid damaging the device.
   • If issues arise, check connections, power supply, and load conditions first.

5. Storage:

   • Store in a dry environment away from direct sunlight and sources of heat.
   • Keep devices in original packaging until ready for use to protect against ESD.

(For reference only)