Details

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BUY PGH5016AM https://www.utsource.net/itm/p/6528618.html
THYRISTOR MODULE 50A / 1600V

Parameter	Description	Value	Unit
Part Number	Full part number	PGH5016AM	-
Type	Device type	MOSFET	-
Configuration	Channel configuration	N-Channel	-
Vds (Max)	Drain-to-source voltage	500	V
Id (Max)	Continuous drain current	16	A
Pd (Max)	Total power dissipation	74	W
Rds(on)	On-state resistance at Vgs=10V	0.028	惟
Vgs(th)	Gate threshold voltage	2.0 to 4.0	V
Qg	Total gate charge	39	nC
Package	Housing type	TO-220	-
Operating Temp	Junction temperature range	-55 to +150	掳C

Instructions for Use:

1. Handling Precautions:

   • The PGH5016AM is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.

2. Mounting:

   • Ensure proper heat sinking when operating at high currents to maintain junction temperature within specified limits.

3. Soldering:

   • Use temperatures not exceeding 260掳C for no more than 10 seconds per terminal during soldering operations.

4. Storage:

   • Store in a dry environment and avoid exposure to corrosive atmospheres.

5. Testing:

   • For testing the device, ensure that all voltages applied do not exceed the maximum ratings provided in the parameter table.

6. Application:

   • Suitable for switching applications in power supplies, motor control, and other high-current circuits where low on-resistance is required.

(For reference only)