Details

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BUY PS11002-C https://www.utsource.net/itm/p/6528706.html

Parameter	Description	Value
Part Number	Unique identifier for the component	PS11002-C
Type	Component category	Photodiode
Package	Encapsulation type of the component	TO-46 Metal
Wavelength Range	Sensitivity range to light	400 nm to 1100 nm
Reverse Voltage	Maximum voltage that can be applied in reverse bias	35 V
Dark Current	Current flowing through the diode in darkness	1 nA (max) at 25掳C
Response Time	Time taken by the diode to respond to changes in light	5 渭s (typical)
Operating Temp.	Temperature range under which the device can operate	-40掳C to +85掳C
Storage Temp.	Temperature range for storage without damage	-40掳C to +85掳C
Spectral Response	Efficiency of converting light to electrical signal	Refer to datasheet graph
Output Current	Maximum current output	Refer to datasheet graph

Instructions for Use:

1. Handling: Handle with care to avoid damaging the sensitive photodiode surface.
2. Mounting: Ensure proper mounting to maintain thermal and electrical connections as specified.
3. Biasing: Operate within the specified reverse voltage limits to prevent damage.
4. Temperature: Keep within the operating temperature range to ensure reliable performance.
5. Storage: Store in a dry, cool place within the specified storage temperature range.
6. Testing: For accurate testing, refer to the spectral response graph provided in the datasheet to understand efficiency at different wavelengths.
7. Application: Suitable for applications requiring detection in the visible and near-infrared spectrum, such as optical sensors or receivers.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)