Details
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Thyristor / Diode Modules
| Parameter | Description |
|---|---|
| Part Number | SKKT57B14E |
| Type | Silicon Carbide (SiC) Schottky Barrier Diode |
| Maximum Reverse Voltage (VRRM) | 1200 V |
| Maximum RMS Voltage | 849 V |
| Maximum Average Rectified Forward Current (IF(AV)) | 14 A at TAMB = 25掳C, 11 A at TAMB = 80掳C |
| Peak Non-Repetitive Forward Surge Current (IFSM) | 140 A (tp=10ms, sin) |
| Forward Voltage (VF) | 2.3 V at IF = 14 A |
| Total Power Dissipation (PTOT) | 140 W at TC = 25掳C |
| Junction Temperature (TJ) | -55 to +175掳C |
| Storage Temperature (TSTG) | -55 to +175掳C |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
Instructions for Use:
- Handling and Storage: Store in a dry place and handle with care to avoid damage. Avoid exposing the device to extreme temperatures or humidity.
- Installation: Ensure proper heat sinking to manage the junction temperature, especially under high current conditions. Follow manufacturer guidelines for mounting torque and orientation.
- Electrical Connections: Verify that all connections are secure and capable of handling the rated currents and voltages. Use appropriate wire gauges to prevent overheating.
- Safety Precautions: Always use protective equipment when handling high voltage components. Ensure the circuit is de-energized before making any adjustments or repairs.
- Testing: Before full operation, perform initial tests at reduced power levels to ensure correct installation and functionality. Monitor temperature and performance during testing.
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