Details

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BUY MIG50Q7CSAOX https://www.utsource.net/itm/p/6528915.html

Parameter	Description
Part Number	MIG50Q7CSAOX
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
Vds (Max Drain-Source Voltage)	50V
Id (Continuous Drain Current)	7A at Tc = 25掳C
Rds(on) (Drain-Source On-Resistance)	7 m惟 at Vgs = 10V, Id = 7A
Pd (Power Dissipation)	38.4W at Tc = 25掳C
Vgs(th) (Gate-Source Threshold Voltage)	2.0V to 4.0V
Qg (Total Gate Charge)	69 nC
Package Type	TO-220AB
Operating Temperature Range	-55掳C to +150掳C
Mounting Type	Through Hole

Instructions:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe practices.
2. Storage Conditions: Store in a dry environment away from direct sunlight and extreme temperatures.
3. Installation: Ensure proper heat sinking for the TO-220AB package if operating near maximum current or power dissipation limits.
4. Soldering: Use a temperature-controlled soldering iron and do not exceed 300掳C for more than 10 seconds per joint.
5. Testing: Before applying power, verify all connections are correct and within specified voltage and current limits.
6. Application: Suitable for switching applications in power supplies, motor control, and other high-power circuits.

(For reference only)