Details

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BUY CM100DUS-12F https://www.utsource.net/itm/p/6528990.html
HIGH POWER SWITCHING USE

Parameter	Description
Part Number	CM100DUS-12F
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Polarity	N-Channel
Vds (Drain-Source Voltage)	卤600V (Continuous)
Id (Drain Current)	100A (Continuous at Tc = 25掳C)
Rds(on) (On-State Resistance)	1.8m惟 (Max at Vgs = 15V, Id = 100A)
Vgs(th) (Gate Threshold Voltage)	4.0V (Min), 6.0V (Max)
Power Dissipation (Ptot)	360W (at Tc = 25掳C)
Operating Temperature Range	-55掳C to +175掳C
Package Type	TO-247
Features	Ultrafast recovery body diode, low on-state resistance

Instructions:

1. Handling Precautions: The CM100DUS-12F is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
2. Mounting: Ensure that the thermal interface material is properly applied for optimal heat dissipation. Follow manufacturer guidelines for mounting torque and orientation.
3. Heat Sinks: For continuous operation at high currents or in high ambient temperatures, use an appropriate heatsink to maintain junction temperature within specified limits.
4. Gate Drive: Ensure the gate drive circuitry provides sufficient voltage levels to fully turn on the MOSFET and minimize switching losses. Avoid exceeding the maximum Vgs rating.
5. Storage Conditions: Store in a dry, cool environment. Avoid exposure to moisture and corrosive environments.
6. Testing: Before installing into the final application, perform initial testing under controlled conditions to ensure functionality and performance meet specifications.

(For reference only)