Details

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BUY KS221K05 https://www.utsource.net/itm/p/6529042.html
Single Darlington Transistor Module 50 Amperes/1000 Volts

Parameter	Description	Value	Unit
Part Number	Device identifier	KS221K05	-
Type	Device type	MOSFET	-
Vds (Max)	Drain-to-source voltage	60	V
Id (Max)	Continuous drain current	5.0	A
Ptot (Max)	Total power dissipation	1.25	W
Rds(on) (Max)	On-resistance	0.18	惟
Vgs(th) (Min)	Gate threshold voltage	1.0	V
Vgs(th) (Typ)	Gate threshold voltage	1.5	V
Vgs(th) (Max)	Gate threshold voltage	2.0	V
Qg (Total)	Total gate charge	25	nC
Input Capacitance	Gate-to-source capacitance at VGS=0V	500	pF

Instructions for Use:

1. Handling Precautions:

   • The KS221K05 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.

2. Mounting:

   • Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain optimal performance and reliability.

3. Biasing:

   • Apply gate voltages within the specified range to avoid damage or unreliable operation. Typically, operate between the minimum and typical gate threshold voltages for best results.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table. Exceeding these limits can cause permanent damage to the device.

5. Storage:

   • Store in a dry, cool environment away from direct sunlight and sources of heat. Follow recommended storage conditions to ensure long-term reliability.

6. Testing:

   • When testing the device, use appropriate test equipment that can accurately measure low resistances and small currents to verify the device's parameters accurately.

(For reference only)