Details

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BUY 6MBI100U4B-120 https://www.utsource.net/itm/p/6529065.html
IGBT MODULE

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V(BR)DSS	-	-	1200	V	Maximum repetitive peak off-state voltage
On-State Voltage	VCE(sat)	-	1.8	-	V @ 50A	Collector-emitter saturation voltage
Continuous Current	IC	-	-	100	A	Continuous collector current
Power Dissipation	PD	-	-	300	W	Total power dissipation
Junction Temperature	TJ	-25	-	150	掳C	Operating junction temperature
Storage Temperature	TSTG	-55	-	150	掳C	Storage temperature range
Gate Charge	Qg	-	96	-	nC	Total gate charge
Turn-on Delay Time	td(on)	-	75	-	ns	Turn-on delay time
Rise Time	tr	-	45	-	ns	Rise time
Turn-off Delay Time	td(off)	-	60	-	ns	Turn-off delay time
Fall Time	tf	-	30	-	ns	Fall time

Instructions for Use:

1. Mounting and Handling: Ensure proper handling to avoid damage from electrostatic discharge (ESD). Use appropriate anti-static measures.
2. Thermal Management: Install adequate heat sinks or cooling systems to maintain the junction temperature within the specified limits.
3. Voltage and Current Ratings: Do not exceed the maximum blocking voltage and continuous current ratings to prevent device failure.
4. Gate Drive Requirements: Ensure the gate drive circuitry can supply sufficient current to charge and discharge the gate capacitance within the required switching times.
5. Safe Operating Area (SOA): Operate the device within its safe operating area to avoid thermal runaway and ensure reliable operation.
6. Storage Conditions: Store in a dry, cool place within the specified storage temperature range to prevent degradation.
7. Testing and Inspection: Perform regular testing and inspection to ensure the device remains within operational parameters.

For detailed application notes and further specifications, refer to the manufacturer's datasheet.

(For reference only)