Details

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BUY BSM100GB120DN11 https://www.utsource.net/itm/p/6529070.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Blocking Voltage	V(BR)DSS	-	1200	-	V
On-State Resistance	RDS(on)	-	0.075	-	惟	VGS = 10V, ID = 30A
Continuous Drain Current	ID	-	-	100	A	Tc = 25掳C
Pulse Drain Current	IGM	-	-	300	A	tp = 10渭s, Tj = 25掳C
Gate Charge	QG	-	80	-	nC	VGS = 卤15V
Total Energy	EAS	-	-	16	J	tp = 10渭s, Tj = 25掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain the junction temperature within specified limits.
   • Handle with care to avoid damage to the pins and body.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly as per the circuit diagram.
   • Apply appropriate gate drive voltage to ensure reliable switching performance.

3. Operating Conditions:

   • Operate within the specified temperature range (-55掳C to +150掳C).
   • Ensure continuous drain current does not exceed 100A at any point to prevent overheating.

4. Pulse Operation:

   • For pulse operations, do not exceed the maximum pulse current of 300A for durations up to 10渭s.
   • Verify that the total energy dissipated during pulses does not exceed 16J.

5. Storage and Packaging:

   • Store in a dry environment away from direct sunlight and extreme temperatures.
   • Follow anti-static precautions to protect against ESD damage.

6. Testing:

   • Perform initial testing under controlled conditions to validate performance parameters.
   • Regularly check connections and mounting for integrity.

For detailed application notes and further specifications, refer to the manufacturer's datasheet.

(For reference only)