Details
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THYRISTOR/DIODE and THYRISTOR/THYRISTOR
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | Device Part Number | IRKH162-12 | - |
| Type | Device Type | MOSFET | - |
| Package | Package Type | TO-252 | - |
| VDS | Drain-Source Voltage | 60 | V |
| VGS(th) | Gate Threshold Voltage | 1.8 to 3.0 | V |
| RDS(on) | On-State Resistance at VGS = 10V | 75 | m惟 |
| ID | Continuous Drain Current | 14.4 | A |
| PD | Power Dissipation | 1.7 | W |
| TJ | Junction Temperature Range | -55 to +150 | 掳C |
| SOA | Safe Operating Area | Refer to Datasheet | - |
Instructions for Use:
- Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation limits.
- Gate Drive: Apply gate voltage within the specified threshold range to ensure reliable switching.
- Thermal Management: Monitor junction temperature and maintain within operational limits to prevent thermal damage.
- Storage Conditions: Store in a dry environment, away from high humidity and corrosive substances.
- Handling: Observe ESD (Electrostatic Discharge) precautions when handling the device to avoid damage.
For detailed application notes and further information, refer to the manufacturer's datasheet.
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