Details

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BUY IXFN44N50U2 https://www.utsource.net/itm/p/6529115.html
HiPerFET Power MOSFETs

Parameter	Symbol	Value	Unit	Test Conditions
Collector-Emitter Voltage	V CES	500	V
Collector Current	I C	4.4	A	TC = 25掳C
Power Dissipation	P T	80	W	TC = 25掳C
Junction Temperature	T J	-55 to 175	掳C
Storage Temperature	T STG	-55 to 150	掳C
Gate Charge	Q G	63	nC
Turn-on Delay Time	t d(on)	49	ns
Rise Time	t r	75	ns
Turn-off Delay Time	t d(off)	29	ns
Fall Time	t f	65	ns

Instructions for IXFN44N50U2

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation effectively.
   • Handle with care to avoid damage to the leads and package.

2. Electrical Connections:

   • Connect the collector (C), emitter (E), and gate (G) terminals correctly.
   • Ensure that the maximum ratings are not exceeded under any operating conditions.

3. Thermal Considerations:

   • Monitor the junction temperature to ensure it stays within the specified range (-55掳C to 175掳C).
   • Use appropriate thermal management techniques, such as heatsinks or cooling systems, especially in high-power applications.

4. Switching Operations:

   • Be mindful of the turn-on and turn-off times to avoid excessive switching losses.
   • Optimize gate drive circuits to minimize switching times while avoiding overvoltage conditions.

5. Storage:

   • Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).

6. Safety Precautions:

   • Follow all safety guidelines when handling and testing the device.
   • Ensure that adequate protective measures are in place during testing and operation.

7. Application Notes:

   • Refer to application notes provided by IXYS for detailed guidance on using this component in specific applications.

(For reference only)