Details
BUY IXTN44N50L https://www.utsource.net/itm/p/6529116.html
High Voltage MegaMOSTMFETs
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Maximum Drain Voltage | VDSS | 500 | V | |
| Maximum Gate-Source Voltage | VGS | ±20 | V | |
| Maximum Drain Current (Tc=25°C) | ID | 4.4 | A | Continuous |
| Maximum Drain Current (Pulsed) | IDM | 18 | A | Pulse width ≤ 10 μs |
| Power Dissipation (Tc=25°C) | PD | 76 | W | Case temperature |
| Junction Temperature | Tj | -55 to +150 | °C | |
| Storage Temperature | Tstg | -55 to +150 | °C | |
| Total Gate Charge | Qg | 43 | nC | @ VGS = 15V |
| Input Capacitance | Ciss | 2090 | pF | @ VDS = 30V, f = 1 MHz |
| Output Capacitance | Coss | 280 | pF | @ VDS = 30V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 180 | pF | @ VDS = 30V, f = 1 MHz |
Instructions for Use:
Handling Precautions: The IXTN44N50L is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures when handling the device.
Mounting: Ensure proper thermal management. The junction temperature must be kept within the specified limits (-55°C to +150°C).
Voltage and Current Ratings: Do not exceed the maximum drain voltage (VDSS) of 500V or the maximum drain current (ID) of 4.4A continuous at a case temperature of 25°C. For pulsed applications, ensure that the pulse width does not exceed 10 μs.
Power Dissipation: Operate within the power dissipation limit (PD) of 76W at a case temperature of 25°C. Consider heat sinking if operating near this limit.
Capacitances: Account for the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in circuit design, especially in high-frequency applications.
Storage Conditions: Store the device in an environment where the temperature remains between -55°C and +150°C.
Gate Drive: Ensure the gate-source voltage (VGS) does not exceed ±20V to prevent damage to the gate oxide.
Total Gate Charge: Factor in the total gate charge (Qg) of 43nC when designing drive circuits, particularly for switching applications.
For detailed application notes and more specific guidance, refer to the manufacturer's datasheet and technical documentation.
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