Details

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BUY MTT18M12N https://www.utsource.net/itm/p/6529141.html
Ultrafast Recovery Modules

Parameter	Description	Value	Unit
Part Number	Component Identifier	MTT18M12N	-
Type	Device Type	MOSFET	-
Configuration	Channel Type	N-Channel	-
VDS (Max)	Drain-to-Source Voltage	120	V
VGS(th)	Gate Threshold Voltage	2.0 to 4.0	V
ID (Max)	Continuous Drain Current	18	A
PD (Max)	Total Power Dissipation	65	W
RDS(on)	On-State Resistance at VGS=10V	3.7	m惟
TJ (Max)	Junction Temperature	175	掳C
Package	Encapsulation Type	TO-220	-
Operating Temp.	Operating Temperature Range	-55 to 150	掳C

Instructions for Use:

1. Handling Precautions: The MTT18M12N is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking when mounting the device, especially in high-power applications to manage heat effectively.
3. Soldering: Follow standard soldering practices. Avoid excessive heat and ensure good thermal contact between the device and the PCB or heatsink.
4. Electrical Connections: Connect the gate to a stable voltage source or driver circuit to prevent unintended switching. Ensure all connections are secure and correctly wired.
5. Testing: Before final assembly, test the device in a controlled environment to verify performance parameters match expected values.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.

(For reference only)