Details

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BUY IXFN170N10 https://www.utsource.net/itm/p/6529148.html
HiPerFET Power MOSFET

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-source voltage	VDS	-	-	100	-	V
Gate-source voltage	VGS	-	-	卤20	-	V
Continuous drain current	ID	Ta = 25掳C	-	170	-	A
Pulse drain current	IDM	tp = 10 渭s, Rep Rate = 1 Hz	-	450	-	A
Power dissipation	PD	TC = 25掳C	-	220	-	W
Junction temperature	TJ	-	-	175	-	掳C
Thermal resistance, junction to case	R胃JC	-	-	0.5	-	掳C/W

Instructions for IXFN170N10:

1. Handling and Storage:

   • Store in a dry environment.
   • Handle with care to avoid damage to the leads or body.

2. Mounting:

   • Ensure proper heat sinking for high-power applications.
   • Use insulated mounting hardware if required by the application.

3. Electrical Connections:

   • Verify correct polarity before applying power.
   • Use appropriate wire gauge for connections to handle rated currents.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Operate within specified temperature ranges to ensure reliability.

5. Testing:

   • For accurate testing, use conditions as close as possible to those specified in the parameter table.
   • Avoid prolonged exposure to maximum voltages and currents during testing.

6. Safety Precautions:

   • Always disconnect power before making adjustments or repairs.
   • Use protective equipment when handling high-voltage circuits.

(For reference only)