CM300HA-12H

CM300HA-12H


Specifications
SKU
6529155
Details

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HIGH POWER SWITCHING USE INSULATED TYPE
Parameter Description
Part Number CM300HA-12H
Type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package Type TO-247
Polarity N-Channel
Vds (Drain-Source Voltage) 1200 V
Id (Continuous Drain Current) 300 A at Tc = 25掳C, 240 A at Tc = 100掳C
Rds(on) (On-State Resistance) 1.8 m惟 at Vgs = 15 V, Id = 300 A
Input Capacitance (Ciss) 9600 pF at Vds = 600 V, Vgs = 0 V
Output Capacitance (Coss) 360 pF at Vds = 600 V, Id = 0 A
Gate Charge (Qg) 290 nC at Vgs = 15 V, Id = 300 A
Power Dissipation (Ptot) 250 W at Tc = 25掳C
Operating Temperature Range -55掳C to +175掳C
Storage Temperature Range -55掳C to +175掳C

Instructions for Use:

  1. Installation and Handling: Handle with care to avoid damage to the gate oxide. Use appropriate ESD protection measures.
  2. Mounting: Ensure proper thermal management by using a heatsink or heat spreader to dissipate heat effectively.
  3. Biasing: Apply gate voltage carefully within specified limits to prevent damage to the device.
  4. Current Limitation: Do not exceed the maximum continuous drain current ratings under any operating conditions.
  5. Voltage Handling: Operate within the rated drain-source voltage to avoid breakdown.
  6. Thermal Monitoring: Monitor the junction temperature to ensure it remains within safe operating limits.
  7. Capacitance Considerations: Account for input and output capacitances in high-frequency applications to maintain stability.
  8. Storage Conditions: Store in a dry environment within the specified storage temperature range to prevent degradation.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)

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