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HIGH POWER SWITCHING USE INSULATED TYPE
Parameter | Description |
---|---|
Part Number | CM300HA-12H |
Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
Package Type | TO-247 |
Polarity | N-Channel |
Vds (Drain-Source Voltage) | 1200 V |
Id (Continuous Drain Current) | 300 A at Tc = 25掳C, 240 A at Tc = 100掳C |
Rds(on) (On-State Resistance) | 1.8 m惟 at Vgs = 15 V, Id = 300 A |
Input Capacitance (Ciss) | 9600 pF at Vds = 600 V, Vgs = 0 V |
Output Capacitance (Coss) | 360 pF at Vds = 600 V, Id = 0 A |
Gate Charge (Qg) | 290 nC at Vgs = 15 V, Id = 300 A |
Power Dissipation (Ptot) | 250 W at Tc = 25掳C |
Operating Temperature Range | -55掳C to +175掳C |
Storage Temperature Range | -55掳C to +175掳C |
Instructions for Use:
- Installation and Handling: Handle with care to avoid damage to the gate oxide. Use appropriate ESD protection measures.
- Mounting: Ensure proper thermal management by using a heatsink or heat spreader to dissipate heat effectively.
- Biasing: Apply gate voltage carefully within specified limits to prevent damage to the device.
- Current Limitation: Do not exceed the maximum continuous drain current ratings under any operating conditions.
- Voltage Handling: Operate within the rated drain-source voltage to avoid breakdown.
- Thermal Monitoring: Monitor the junction temperature to ensure it remains within safe operating limits.
- Capacitance Considerations: Account for input and output capacitances in high-frequency applications to maintain stability.
- Storage Conditions: Store in a dry environment within the specified storage temperature range to prevent degradation.
For detailed specifications and application notes, refer to the manufacturer's datasheet.
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