Details

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BUY MG500Q1US1 https://www.utsource.net/itm/p/6529286.html
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, ITrms:8A; Gate Trigger Current QI, Igt:5mA; Current, It av:8A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes

Parameter	Description	Value
Part Number	Unique identifier for the component	MG500Q1US1
Type	Type of electronic component	MOSFET
Configuration	Channel configuration	N-Channel
Voltage (Vds)	Drain-to-source voltage	500 V
Current (Id)	Continuous drain current	24 A
Power Dissipation	Maximum power dissipation	130 W
Package	Physical package type	TO-247-3L
Operating Temp	Operating temperature range	-55掳C to +150掳C
Gate Charge	Total gate charge	69 nC
Input Capacitance	Capacitance between gate and source	1650 pF
Rds(on)	On-state resistance at specified conditions	0.08 ohms @ Vgs=10V

Instructions:

1. Handling Precautions: Use proper ESD protection when handling the MG500Q1US1 to avoid damaging the sensitive components.
2. Mounting: Ensure that the device is mounted correctly on the PCB with adequate cooling solutions if operating near maximum power dissipation.
3. Soldering: Follow standard soldering procedures suitable for the TO-247-3L package, ensuring not to exceed the maximum junction temperature during the process.
4. Testing: After installation, test the device under controlled conditions to ensure it meets the specified parameters.
5. Storage: Store in a dry environment free from corrosive substances and excessive humidity to prevent damage to the packaging or internal components.
6. Application Notes: Refer to the manufacturer's application notes for detailed guidelines on using this MOSFET in specific circuit designs.

(For reference only)