Details

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BUY E40N55 https://www.utsource.net/itm/p/6529311.html

Parameter	Value	Unit
Type	N-Channel	-
Maximum Drain Current (ID)	55	A
Maximum Gate-Source Voltage (VGS)	卤20	V
Maximum Drain-Source Voltage (VDS)	400	V
On-State Resistance (RDS(on))	0.038	惟
Gate Charge (Qg)	120	nC
Total Power Dissipation (Ptot)	260	W
Junction Temperature (TJ)	-55 to 175	掳C

Instructions for E40N55:

1. Handling Precautions: The E40N55 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat dissipation by mounting on a suitable heatsink if operating at high power levels.
3. Voltage Ratings: Do not exceed the maximum gate-source voltage (VGS) of 卤20V or the drain-source voltage (VDS) of 400V to prevent damage.
4. Current Handling: The device can handle up to 55A of continuous drain current. Ensure that the application does not exceed this limit under any conditions.
5. Thermal Considerations: Monitor the junction temperature, which should be kept within the range of -55掳C to 175掳C. Exceeding these limits can lead to permanent damage.
6. Gate Drive: Use adequate gate drive circuits to ensure the MOSFET switches properly between on and off states, minimizing switching losses.
7. Storage: Store in a dry environment to avoid moisture damage. Follow the manufacturer's guidelines for storage conditions.

(For reference only)