Details

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BUY PDT508 https://www.utsource.net/itm/p/6529394.html

Parameter	Description	Value
Part Number	Device identifier	PDT508
Type	Component type	Photodiode
Material	Semiconductor material	Silicon
Spectral Range	Wavelength range of sensitivity	400 nm - 1100 nm
Peak Sensitivity	Wavelength with highest sensitivity	950 nm
Reverse Voltage	Maximum reverse voltage	5 V
Dark Current	Current in the absence of light at room temp	< 1 nA
Capacitance	Junction capacitance	2 pF
Response Time	Time to respond to changes in light intensity	1 渭s
Operating Temp.	Temperature range for operation	-40掳C to +85掳C
Package	Enclosure type	TO-46 metal can

Instructions:

1. Installation: Ensure that the device is handled with care to avoid damage to the sensitive photodiode element. Use appropriate ESD protection measures.
2. Biasing: Apply a reverse bias voltage not exceeding the specified maximum reverse voltage.
3. Mounting: Secure the component using recommended mounting techniques suitable for the TO-46 package to ensure thermal and electrical connections are reliable.
4. Operation: Operate within the specified temperature range to maintain performance characteristics. Avoid exposure to extreme temperatures or humidity.
5. Testing: When testing the device, use a light source within the spectral range for accurate measurement of response. Ensure ambient light conditions are controlled to minimize interference.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.

(For reference only)