Details

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BUY IRFK4H250 https://www.utsource.net/itm/p/6529396.html
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	0.25	-	惟	VGS = 10V, ID = 25A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250渭A
Continuous Drain Current	ID	-	-	25	A	TC = 25掳C
Pulse Drain Current	IDM	-	-	90	A	TP = 10ms, Duty Cycle = 1%
Power Dissipation	PD	-	-	360	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions: The IRFK4H250 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
2. Mounting: Ensure proper heat sinking to maintain the junction temperature within specified limits. This is crucial for reliable operation.
3. Biasing: Apply gate-source voltage (VGS) carefully. Exceeding the threshold voltage can lead to higher current conduction which may cause overheating if not properly managed.
4. Pulse Operation: When operating in pulse mode, ensure that the pulse width and duty cycle do not exceed the ratings to avoid thermal overload.
5. Storage: Store in a dry environment within the specified storage temperature range to prevent damage.
6. Soldering: Follow standard soldering practices suitable for surface mount devices. Avoid excessive heat during soldering to prevent damage to the device.

For detailed application notes and more comprehensive guidance, refer to the official datasheet provided by the manufacturer.

(For reference only)