Details

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BUY SKM75GD124D https://www.utsource.net/itm/p/6529414.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions/Notes
Collector-Emitter Voltage	V CES	-	-	1200	V	Maximum voltage between collector and emitter with the gate open
Gate-Emitter Voltage	V GES	-15	-	+15	V	Maximum allowable gate-emitter voltage
Continuous Collector Current	I C	-	-	75	A	Maximum continuous collector current
Pulse Collector Current	I CM	-	-	150	A	Maximum pulse collector current (t ≤ 10 μs)
Power Dissipation	P TOT	-	-	340	W	Total power dissipation at T C = 25°C
Junction Temperature	T J	-	-	150	°C	Maximum junction temperature
Storage Temperature	T STG	-55	-	150	°C	Operating storage temperature range
Thermal Resistance	R thJC	-	-	0.6	K/W	Junction to case thermal resistance

Instructions for Use:

1. Mounting: Ensure proper mounting to a heatsink to maintain optimal operating temperatures. The SKM75GD124D is designed for applications where effective heat dissipation is crucial.
2. Gate Drive: Apply gate drive voltages within the specified limits (-15V to +15V). Exceeding these limits can cause damage to the device.
3. Current Handling: Do not exceed the maximum continuous or pulse collector currents. For pulse conditions, ensure the pulse width does not exceed 10 μs.
4. Temperature Management: Monitor the junction temperature to ensure it does not exceed 150°C. Effective cooling methods should be employed if necessary.
5. Storage and Handling: Store the device in an environment within the specified storage temperature range (-55°C to 150°C) to prevent damage.
6. Power Dissipation: Be mindful of the total power dissipation limit (340W at 25°C case temperature). Adjust derating factors as per application requirements.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)