Details

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BUY IXFN26N50 https://www.utsource.net/itm/p/6529443.html
Polar Power MOSFET HiPerFET

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES				500	V
Gate-Source Voltage	V GS		-15		15	V
Continuous Collector Current	I C	TC = 25掳C		26		A
Pulse Collector Current	I CM	tp = 10 渭s, TC = 25掳C		78		A
Total Power Dissipation	P TOT	TC = 25掳C			340	W
Junction Temperature	T J		-55		175	掳C
Storage Temperature	T STG		-55		150	掳C
Forward Transconductance	g fs	V GS = 10V, I C = 26A	24			S

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings provided in the table to prevent damage.
   • Use appropriate ESD protection when handling the device.

2. Mounting and Thermal Management:

   • Ensure adequate heat sinking for applications where the device will operate near its thermal limits.
   • Follow recommended PCB layout guidelines to minimize stray inductance and improve thermal performance.

3. Electrical Connections:

   • Verify correct polarity connections between the gate, source, and drain terminals.
   • Apply gate-source voltage within specified limits to avoid gate oxide breakdown.

4. Operating Environment:

   • Operate within the specified junction temperature range to ensure reliable performance.
   • Store and handle the device within the storage temperature range to avoid physical or electrical damage.

5. Testing and Verification:

   • Perform initial testing under controlled conditions to validate the device's operation within your specific application parameters.
   • Regularly monitor device performance during prolonged use to ensure it remains within acceptable operational limits.

(For reference only)