Details

---

BUY MG100H2YS1 https://www.utsource.net/itm/p/6529476.html
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description	Value	Unit
Part Number	Full part number	MG100H2YS1	-
Type	Component type	MOSFET	-
Package	Package type	TO-252	-
VDS	Drain-to-source voltage	100	V
ID	Continuous drain current	2.0	A
PD	Total power dissipation	0.74	W
RDS(on)	On-resistance at specified conditions	0.18	惟
VGS(th)	Gate threshold voltage	2.0 to 4.0	V
Qg	Total gate charge	16	nC
EAS	Avalanche energy	130	mJ
SOA	Safe operating area	Refer to datasheet	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exposure to static electricity; use anti-static wrist straps and mats.
   • Handle by edges or leads to prevent damage.

2. Mounting:

   • Ensure correct orientation before soldering.
   • Use appropriate soldering temperature and time to avoid thermal shock.

3. Electrical Connections:

   • Connect the source, gate, and drain according to circuit design specifications.
   • Ensure all connections are secure and insulated as necessary.

4. Operating Conditions:

   • Operate within the specified voltage and current limits.
   • Monitor temperature to ensure it remains within safe operational limits.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against ESD.

For detailed specifications and further information, refer to the manufacturer's datasheet.

(For reference only)