Details

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BUY STE40NA60 https://www.utsource.net/itm/p/6529518.html
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCES	-	-	600	V	Maximum voltage between collector and emitter with the gate open.
Gate-Emitter Voltage	VGES	-20	-	+20	V	Maximum allowable voltage between gate and emitter.
Continuous Collector Current	IC	-	40	-	A	Maximum continuous current flowing from collector to emitter.
Pulse Collector Current	ICM	-	120	-	A	Peak pulse current, non-repetitive.
Power Dissipation	PD	-	-	280	W	Maximum power dissipation at Tc = 25掳C.
Junction Temperature	TJ	-55	-	175	掳C	Operating junction temperature range.
Storage Temperature	TSTG	-55	-	175	掳C	Temperature range for storage.

Instructions for Use:

1. Mounting: Ensure proper heat sinking for efficient heat dissipation, especially when operating near maximum power dissipation.
2. Voltage Handling: Do not exceed the rated collector-emitter voltage (VCES) to prevent breakdown or damage.
3. Current Limitation: Operate within the continuous collector current (IC) limits to avoid overheating. For pulse applications, ensure peak currents do not exceed ICM.
4. Gate Protection: Protect the gate-emitter junction from voltages exceeding VGES ratings by using appropriate clamping diodes or resistors.
5. Temperature Monitoring: Monitor the junction temperature (TJ) to stay within operational limits. Use thermal sensors if necessary.
6. Storage Conditions: Store in environments that maintain temperatures within the specified storage temperature (TSTG) range to ensure longevity.
7. Electrostatic Discharge (ESD) Precautions: Handle with care to prevent ESD damage; use grounded wrist straps and anti-static packaging.

(For reference only)