Details

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BUY MIG600J2CMB1W https://www.utsource.net/itm/p/6529572.html
High Power Switching Applications Motor Control Applications

Parameter	Description
Part Number	MIG600J2CMB1W
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
VDS (Max Drain-Source Voltage)	600 V
RDS(on) (Typical On-Resistance)	0.85 惟 @ VGS=10V, ID=1A
ID (Continuous Drain Current)	2 A (Ta=25掳C)
Power Dissipation (PD)	2 W (Ta=25掳C)
Total Gate Charge (QG)	45 nC
Input Capacitance (Ciss)	1390 pF
Output Capacitance (Coss)	27 pF
Reverse Transfer Capacitance (Crss)	10 pF
Operating Temperature Range	-55掳C to +150掳C
Package Type	TO-252 (DPAK)
RoHS Compliant	Yes

Instructions for Use:

1. Handling Precautions:

   • This device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.

2. Mounting:

   • Ensure proper thermal management by using heat sinks or other cooling methods if operating at high currents or temperatures.
   • Follow the manufacturer's guidelines for PCB layout to ensure optimal performance.

3. Biasing:

   • Apply gate voltage carefully as excessive voltage can damage the device. Ensure VGS does not exceed the maximum rating.

4. Testing:

   • Before applying power, verify all connections are correct.
   • Test the device in a controlled environment to ensure it operates within specified parameters.

5. Storage:

   • Store in original packaging in a dry, cool place away from direct sunlight and sources of heat.

6. Soldering:

   • Use a temperature-controlled soldering iron and follow recommended soldering profiles to avoid thermal shock to the component.

(For reference only)