7MBR25SA120B-50

7MBR25SA120B-50


Specifications
SKU
6529597
Details

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IGBT(1200V/25A/PIM)
Parameter Value Unit
Part Number 7MBR25SA120B-50 -
Type MOSFET -
Voltage Rating (VDS) 1200 V
Current Rating (ID) 25 A
RDS(on) 80
Gate Charge (QG) 64 nC
Power Dissipation (PD) 175 W
Junction Temperature -55 to +175 °C
Package Type TO-247-3 -

Instructions:

  1. Handling Precautions:

    • Use proper ESD protection when handling the device.
    • Avoid mechanical stress on the pins.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat.
    • Apply thermal paste if necessary for optimal heat dissipation.
  3. Soldering:

    • Soldering temperature should not exceed 260°C for more than 10 seconds per joint.
    • Allow adequate cooling time after soldering.
  4. Storage:

    • Store in a dry environment, away from direct sunlight and corrosive materials.
  5. Operation:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure the junction temperature remains within the specified limits during operation.
  6. Testing:

    • Use appropriate test equipment calibrated to industry standards.
    • Test parameters under controlled conditions to ensure accuracy.
(For reference only)

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