Details

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BUY PK40F120 https://www.utsource.net/itm/p/6529610.html
THYRISTOR MODULE

Parameter	Description	Value
Part Number	PK40F120
Type	MOSFET	N-Channel
VDS (Max)	Drain-to-Source Voltage	40V
RDS(on)	On-State Resistance at VGS=10V	120 mΩ
ID (Max)	Continuous Drain Current	60A
PD (Max)	Total Power Dissipation	360W
VGS(th)	Gate Threshold Voltage	2.5V to 4.5V
Package	Physical Package Type	TO-247
Operating Temp.	Junction Temperature Range	-55°C to +175°C

Instructions for Use:

1. Handling Precautions:

   • Handle the PK40F120 with care to avoid damage to the leads and body.
   • Use appropriate anti-static measures to prevent ESD damage.

2. Mounting:

   • Ensure proper alignment of the device during mounting to avoid misalignment issues.
   • Tighten screws evenly to specified torque values to prevent stress on the package.

3. Electrical Connections:

   • Verify all connections are secure and correct before applying power.
   • Ensure the gate drive circuitry can supply sufficient voltage and current to fully turn on the MOSFET.

4. Thermal Management:

   • Adequate heat sinking is required to maintain operating temperatures within safe limits.
   • Monitor temperature during operation to ensure it does not exceed the maximum junction temperature.

5. Testing:

   • Perform initial testing at reduced power levels to verify correct operation.
   • Gradually increase power while monitoring performance and temperature.

6. Storage:

   • Store in a dry, cool environment away from direct sunlight.
   • Keep in original packaging until ready to use to protect against static and physical damage.

(For reference only)