Details

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BUY MG200Q1US41 https://www.utsource.net/itm/p/6529687.html
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, ITrms:12A; Gate Trigger Current QI, Igt:10mA; Current, It av:12A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes

Parameter	Description
Part Number	MG200Q1US41
Type	MOSFET - Metal-Oxide-Semiconductor Field-Effect Transistor
Configuration	N-Channel
VDS (Max Drain-Source Voltage)	200 V
RDS(on) (Max On-Resistance)	4.1 mΩ @ VGS=10V, ID=38A
ID (Max Drain Current)	38 A @ 25°C, 30 A @ 100°C
PD (Max Power Dissipation)	207 W @ TC=25°C
VGS (Gate-Source Voltage)	±20 V
fT (Transition Frequency)	6.1 MHz
Qg (Total Gate Charge)	95 nC
Package Type	TO-220AB
Operating Temperature Range	-55°C to +150°C

Instructions for Use:

1. Handling Precautions: The MG200Q1US41 is sensitive to ESD (Electrostatic Discharge). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure proper heat dissipation by mounting the device on a suitable heatsink. Refer to the thermal resistance specifications in the datasheet for optimal performance.
3. Biasing: Apply gate voltage within the specified range to avoid damage. The gate-source voltage should not exceed ±20V.
4. Current Limitation: Do not exceed the maximum drain current ratings to prevent overheating and potential failure.
5. Storage: Store in a dry environment away from direct sunlight and sources of heat.
6. Soldering: Follow standard soldering guidelines for through-hole components. Avoid excessive heat exposure during soldering.

For detailed application notes and more specific parameters, refer to the manufacturer's datasheet.

(For reference only)