Details

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BUY MBM200A6 https://www.utsource.net/itm/p/6529705.html
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES

Parameter	Description	Value
Part Number	Device Identifier	MBM200A6
Type	Device Type	MOSFET
Configuration	Channel Configuration	N-Channel
VDS (Max)	Maximum Drain-to-Source Voltage	200V
VGS (th)	Gate Threshold Voltage	2.5V to 4.5V
ID (Max)	Maximum Drain Current (at 25°C)	6A
RDS(on)	On-State Resistance (at VGS = 10V)	0.18Ω
Power Dissipation (Max)	Maximum Power Dissipation (at TJ = 25°C)	36W
Junction Temperature (Max)	Maximum Junction Temperature	175°C
Package	Housing Type	TO-220

Instructions for Use:

1. Handling Precautions: Handle the MBM200A6 with care to avoid damage to the pins and body. Electrostatic Discharge (ESD) sensitive device; use proper ESD precautions.
2. Mounting: Ensure correct orientation when mounting on a PCB. Follow manufacturer guidelines for soldering temperature and time.
3. Thermal Management: Given the power dissipation capability, ensure adequate heat sinking if operating at high currents or in high ambient temperatures.
4. Voltage Ratings: Do not exceed the maximum ratings for VDS, VGS, and power dissipation. Exceeding these limits can cause permanent damage.
5. Application Circuits: For optimal performance, design application circuits that do not exceed the specified gate threshold voltage range and consider the on-state resistance impact on efficiency.
6. Storage: Store in a dry, cool place away from direct sunlight and corrosive materials.

For detailed specifications and further information, refer to the datasheet provided by the manufacturer.

(For reference only)