Details

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BUY SKM195GB066D https://www.utsource.net/itm/p/6529716.html
Trench IGBT Modules

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES	-	-	650	V
Emitter-Collector Voltage	V ECS	-	-	650	V
Collector Current (Continuous)	I C	-	-	195	A	Tc = 25°C
Collector Current (Pulsed)	I CM	-	-	390	A	Tc = 25°C, Pulse Width ≤ 1 ms
Power Dissipation (Collector)	P C	-	-	1000	W	Tc = 25°C
Junction Temperature	T J	-	-	175	°C
Storage Temperature	T STG	-55	-	150	°C
Gate Charge	Q G	-	24.7	-	nC	V GE = ±15V, I C = 10A
Turn-On Time	t on	-	0.85	-	μs	V CC = 450V, I C = 10A, R G = 10Ω
Turn-Off Time	t off	-	1.45	-	μs	V CC = 450V, I C = 10A, R G = 10Ω

Instructions for Use:

1. Mounting and Heat Sinks: Ensure proper heat dissipation by mounting the SKM195GB066D on a suitable heat sink to maintain operating temperatures within safe limits.

2. Gate Drive Requirements: The gate requires a drive voltage of ±15V for optimal performance. Ensure the gate resistor is appropriately sized to control switching times and minimize losses.

3. Overcurrent Protection: Implement overcurrent protection circuits to safeguard against excessive collector currents which can exceed rated values under fault conditions.

4. Operating Environment: Keep the junction temperature below 175°C. Ensure adequate ventilation or cooling mechanisms are in place, especially in high ambient temperature environments.

5. Storage Conditions: Store the device in a controlled environment where temperatures do not drop below -55°C or rise above 150°C to prevent damage.

6. Handling Precautions: Handle with care to avoid damage to the leads and body. Follow anti-static precautions to prevent electrostatic discharge damage.

7. Testing: When testing, ensure all parameters are within specified limits to avoid damaging the device. Use appropriate test equipment and methods as per industry standards.

(For reference only)