Details

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BUY 2SC2199 https://www.utsource.net/itm/p/6538689.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V	IC = 150 mA, Tc = 25°C
Collector-Base Voltage	VCBO	-	-	80	V	IC = 0 mA, Tc = 25°C
Emitter-Base Voltage	VEBO	-	-	5	V	IE = 5 mA, Tc = 25°C
Collector Current	IC	-	150	-	mA	VCE = 30 V, hFE = 400
DC Current Gain	hFE	100	400	700	-	IC = 150 mA, VCE = 10 V
Transition Frequency	fT	-	300	-	MHz	IC = 150 mA, VCE = 10 V
Storage Temperature	Tstg	-55	-	150	°C	-
Operating Junction Temperature	TJ	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions: The 2SC2199 is sensitive to electrostatic discharge (ESD). Use appropriate handling procedures such as anti-static wrist straps and mats.
2. Mounting: Ensure proper heat dissipation by mounting the transistor on a suitable heatsink if operating at high currents or power levels.
3. Biasing: Operate within specified bias conditions to avoid damage or non-linear performance. Refer to the typical application circuits provided in the datasheet.
4. Temperature Monitoring: Keep the junction temperature within the specified range (-55°C to 150°C) to ensure reliable operation.
5. Voltage Ratings: Do not exceed the maximum ratings for collector-emitter, collector-base, and emitter-base voltages to prevent breakdown.
6. Current Limiting: Implement current limiting resistors where necessary to protect against excessive collector current which can lead to overheating and failure.
7. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.

For detailed application notes and more specific guidance, refer to the manufacturer's datasheet.

(For reference only)