Details

---

BUY DG181BA https://www.utsource.net/itm/p/6541815.html

Parameter	Description	Value
Part Number	Device part number	DG181BA
Type	Device type	MOSFET
Configuration	Channel configuration	N-Channel
Package	Component package type	TO-252
Vds (V)	Drain-to-source voltage	60V
Id (A)	Continuous drain current	7.4A
Vgs(th) (V)	Gate threshold voltage	2.0 to 4.0V
Rds(on) (Ω)	On-resistance at specified conditions	0.045Ω at Vgs=10V
Power Dissipation	Maximum power dissipation	2.3W
Operating Temp.	Operating temperature range	-55°C to 150°C

Instructions for Use:

1. Handling: Handle the DG181BA with care to avoid damage to the leads and body. Ensure that static electricity precautions are followed to prevent damage to the MOSFET.
2. Mounting: When mounting the device, ensure that it is securely fastened but not over-tightened, which could damage the component or the PCB.
3. Electrical Connections: Connect the source, gate, and drain terminals correctly according to your circuit design. Ensure that the maximum ratings for Vds, Id, and power dissipation are not exceeded.
4. Thermal Considerations: If operating near the maximum power dissipation, consider using a heat sink to maintain acceptable operating temperatures.
5. Testing: Before full-scale production, test prototypes thoroughly to ensure proper functionality within the intended application environment.

(For reference only)