Details
| New/Used | Package | Brand | DateCode |
| Used | TO-252 | N/A | N/A |
The AP55T10GH is an N-channel enhancement-mode power MOSFET manufactured by Advanced Power Electronics Corp. It is designed for high-efficiency switching applications, offering a balance between fast switching performance and low on-resistance.
Key Specifications
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Drain-Source Voltage (V<sub>DS</sub>): 100 V
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Continuous Drain Current (I<sub>D</sub>): 56 A at 25°C
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Pulsed Drain Current (I<sub>DM</sub>): 160 A
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Gate-Source Voltage (V<sub>GS</sub>): ±20 V
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Drain-Source On-Resistance (R<sub>DS(on)</sub>): 16.5 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 40 A
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Total Gate Charge (Q<sub>g</sub>): 63 nC
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Input Capacitance (C<sub>iss</sub>): 3300 pF
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