Details

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BUY SMBJ100CA https://www.utsource.net/itm/p/6574071.html
TVS Diode

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Reverse Breakdown Voltage	VBR	-	100	-	V	IRR = 1mA
Maximum Clamping Voltage	VC	-	152	-	V	IPP = 68.9A, tp = 8/20渭s
Peak Pulse Current	IPP	-	68.9	-	A	tp = 8/20渭s
Reverse Leakage Current	IR	-	1	-	渭A	VR = 25V, TA = 25掳C
Junction Capacitance	CJ	-	470	-	pF	VR = 0V, f = 1MHz
Operating Junction Temperature	TJ	-55	-	150	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Mounting: Ensure proper heat dissipation by mounting the SMBJ100CA on a heatsink if necessary, especially in high-power applications.
2. Polarity: Pay attention to the polarity when installing; incorrect installation can lead to device failure.
3. Voltage Handling: Do not exceed the reverse breakdown voltage (VBR) of 100V under any circumstances to avoid damaging the component.
4. Current Limitation: Keep peak pulse currents below 68.9A to prevent overheating and potential failure.
5. Temperature Management: Operate within the specified junction temperature range (-55掳C to 150掳C) to ensure reliable performance.
6. Storage: Store in a dry environment within the storage temperature range (-55掳C to 150掳C).
7. Capacitance Consideration: Be aware of the junction capacitance (470pF) which may affect high-frequency circuit performance.

For detailed application-specific guidelines, refer to the manufacturer's datasheet or contact technical support.

(For reference only)