Details

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BUY BTS5010-1E https://www.utsource.net/itm/p/6576827.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Continuous Current	I_CONT	-	120	-	A	Continuous current capability
Peak Current	I_PEAK	-	250	-	A	Peak current capability (t < 5 ms)
On-State Resistance	R DS(on)	-	4.5	-	mΩ	On-state resistance at 25°C, V GS = 10 V
Thermal Shutdown	T SD	-	170	-	°C	Thermal shutdown temperature
Operating Temperature	T OP	-40	-	150	°C	Operating junction temperature range
Gate Charge	Q G	-	95	-	nC	Total gate charge

Instructions for BTS5010-1E

1. Mounting and Layout:

   • Ensure the device is mounted on a suitable heatsink to dissipate heat effectively.
   • Keep the PCB layout compact to minimize parasitic inductance.

2. Power Supply:

   • Use decoupling capacitors close to the supply pins to stabilize the power supply voltage.
   • Ensure the supply voltage does not exceed the maximum ratings specified in the datasheet.

3. Gate Drive:

   • Provide sufficient gate drive voltage to ensure the MOSFET turns on fully and minimizes on-resistance.
   • Avoid excessive gate-source voltage to prevent damage.

4. Thermal Management:

   • Monitor the operating temperature to stay within the operational limits.
   • Implement thermal management techniques such as forced air cooling if necessary.

5. Protection Circuits:

   • Incorporate overcurrent protection circuits to safeguard against excessive currents.
   • Consider using TVS diodes to protect against transient voltages.

6. Handling Precautions:

   • Handle the device with care to avoid ESD damage.
   • Follow proper soldering procedures to prevent thermal shock to the component.

(For reference only)