Details

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BUY 2N3019A https://www.utsource.net/itm/p/6586637.html
N/A

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	-	150	V	IC = 2mA, Tc = 25°C
Emitter-Base Voltage	V(BR)EBO	-	-	7	V	IE = 10mA, Tc = 25°C
Collector Current	IC	-	-	400	mA	VCE = 30V, Tc = 25°C
Power Dissipation	PD	-	-	625	mW	Tc = 25°C
Transition Frequency	fT	-	250	-	MHz	IC = 10mA, VCE = 3V, Tc = 25°C
Storage Temperature	Tstg	-55	-	150	°C	-
Operating Junction Temperature	TJ	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions: The 2N3019A is sensitive to electrostatic discharge (ESD). Use proper handling techniques such as anti-static wrist straps and mats.

2. Mounting: Ensure that the device is mounted in a way that it can dissipate heat effectively. Consider using heatsinks if operating near maximum power dissipation.

3. Biasing: Proper biasing is crucial for optimal performance. Ensure that the base current is sufficient to fully turn on the transistor but not so high as to cause excessive heating.

4. Operating Limits: Do not exceed the maximum ratings listed in the table. Exceeding these limits can lead to permanent damage or reduced lifetime of the component.

5. Storage: Store the device in an environment within the storage temperature range to avoid damage.

6. Testing: When testing the device, ensure that all conditions specified in the parameter table are met to get accurate readings.

7. Applications: Suitable for RF applications due to its high transition frequency, making it ideal for amplifiers and oscillators in the MHz range.

(For reference only)