Details

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BUY 2N5115 https://www.utsource.net/itm/p/6589197.html
N/A

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	150	V	IC = 0.5A, Tc = 25°C
Collector-Base Voltage	VCBO	-	-	150	V	IC = 0, Tc = 25°C
Emitter-Base Voltage	VEBO	-5	-	-6	V	IE = 5mA, Tc = 25°C
Collector Current	IC	-	-	0.5	A	VCE = 1V, Tc = 25°C
DC Current Gain	hFE	40	100	300	-	IC = 150mA, VCE = 1V, Tc = 25°C
Transition Frequency	fT	-	100	-	MHz	IC = 10mA, VCE = 10V, Tc = 25°C

Instructions for Use:

1. Mounting: Ensure the device is securely mounted to avoid mechanical stress on the leads.
2. Handling: Handle with care to prevent damage from electrostatic discharge (ESD).
3. Operating Temperature: The operating temperature range for the 2N5115 is -65°C to +150°C.
4. Storage Temperature: Store in a cool, dry place within the temperature range of -65°C to +150°C.
5. Soldering: Solder within 3 seconds at a temperature not exceeding 260°C.
6. Biasing: Ensure proper biasing to maintain the transistor in the desired region of operation (cut-off, active, or saturation).
7. Heat Dissipation: If used at high power levels, consider using a heat sink to dissipate excess heat and maintain reliability.
8. Maximum Ratings: Do not exceed the maximum ratings listed in the table to prevent damage to the device.

(For reference only)