Details
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| Parameter | Description |
|---|---|
| Part Number | VN800S |
| Type | N-Channel Enhancement Mode MOSFET |
| Package | TO-220 |
| Vds (V) | 60 |
| Id (A) | 13 |
| Rds(on) (mΩ) | 4.5 (at Vgs = 10V) |
| Power Dissipation | 65 W |
| Operating Temp | -55°C to +150°C |
| Gate Charge (Qg) | 29 nC |
| Input Capacitance | 1720 pF |
| Total Gate Charge | 41 nC |
Instructions for Use:
Handling Precautions: The VN800S is sensitive to ESD (Electrostatic Discharge). Use proper ESD protection measures when handling the device.
Mounting: Ensure that the mounting surface is flat and clean. Apply thermal paste between the heat sink and the device for efficient heat dissipation.
Biasing: For optimal performance, ensure that the gate-source voltage (Vgs) is within the specified limits. Typically, a Vgs of 10V is recommended to fully enhance the MOSFET.
Heat Management: Given the power dissipation capability, adequate cooling solutions such as heat sinks or forced air cooling may be necessary depending on the application.
Storage: Store in a dry environment and avoid exposure to moisture and corrosive environments.
Testing: Before integrating into a circuit, perform initial tests with limited current and voltage to verify functionality and connections.
Application Notes: Refer to manufacturer's application notes for detailed information on specific applications and advanced usage scenarios.
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