Details

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BUY VND830EH https://www.utsource.net/itm/p/6620313.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VDD	4.5	-	40	V	Operating supply voltage range
Continuous Drain	ID	-	3.8	-	A	Continuous drain current at Tc = 25°C
Peak Pulse Current	IPP	-	6	-	A	Peak pulse current (Tc = 25°C, t = 1ms)
RDS(on)	RDS(on)	55	-	75	mΩ	On-state resistance at Tc = 25°C
Gate Threshold Volt.	VGS(th)	1.2	-	2.5	V	Gate threshold voltage
Total Power Dissipation	PD	-	-	0.9	W	Total power dissipation
Junction Temperature	TJ	-40	-	150	°C	Operating junction temperature range

Instructions for VND830EH:

1. Power Supply: Ensure the supply voltage (VDD) is within the specified range of 4.5V to 40V.
2. Current Handling: The device can handle a continuous drain current up to 3.8A at a case temperature (Tc) of 25°C. For peak pulse currents, it can withstand up to 6A for short durations (1ms).
3. On-State Resistance: The on-state resistance (RDS(on)) varies between 55mΩ and 75mΩ depending on conditions, which affects power dissipation.
4. Gate Drive: Apply a gate-source voltage (VGS) above the threshold (1.2V to 2.5V) to turn the device on. Adequate drive voltage ensures low RDS(on).
5. Thermal Management: Keep the junction temperature (TJ) within -40°C to 150°C. Use appropriate heat sinks if necessary to manage heat during high current operations.
6. Total Power Dissipation: Do not exceed the total power dissipation limit of 0.9W to avoid overheating and potential damage to the device.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)