Details

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BUY K4B1G1646G-BCK0 https://www.utsource.net/itm/p/6779934.html

Parameter	Description
Product Name	K4B1G1646G-BCK0
Manufacturer	Samsung
Type	DDR3 SDRAM
Capacity	1 Gb (128Mb x 8)
Organization	8-bank
Voltage	1.35V / 1.5V
Speed	1600 Mbps
CAS Latency	CL = 11, 13, 15
Operating Temperature	-40°C to +85°C
Package Type	BGA
Pin Count	78
Data Width	8-bit
Features	DLL-free, RTT, ODT, VrefDQ, VrefCA

Instructions for Use:

1. Power Supply:

   • Ensure the power supply voltage is set correctly at either 1.35V or 1.5V as per your system requirements.

2. Initialization:

   • Before performing any read/write operations, initialize the device according to the JEDEC standard DDR3 initialization sequence.

3. Address and Command Signals:

   • Apply address and command signals as specified in the DDR3 protocol. Ensure proper timing and signal integrity.

4. Data Strobes and Clocks:

   • Use differential clock inputs (CLK/CLK#) and ensure that DQS (data strobe) signals are properly synchronized with data transfers.

5. Temperature Considerations:

   • Operate within the specified temperature range (-40°C to +85°C) to maintain reliability and performance.

6. Termination Resistors:

   • Configure RTT (Rtt) and ODT (On-Die Termination) settings as required by your system design to minimize reflections and improve signal integrity.

7. Reference Voltages:

   • Provide stable VrefDQ and VrefCA reference voltages to ensure accurate data capture and command/address interpretation.

8. Handling:

   • Handle the component with care to avoid damage to pins and ensure ESD protection during assembly and handling.

9. Testing:

   • After installation, perform thorough testing to validate memory functionality and performance under various conditions.

(For reference only)