Details

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BUY SIHG47N60E-GE3 https://www.utsource.net/itm/p/6781856.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	70	-	mΩ @ ID=25A, VGS=10V	On-resistance at specified conditions
Gate Charge	Qg	-	113	-	nC	Total gate charge
Input Capacitance	Ciss	-	4800	-	pF	Input capacitance at zero bias
Output Capacitance	Coss	-	690	-	pF	Output capacitance at zero bias
Reverse Transfer Capacitance	Crss	-	140	-	pF	Reverse transfer capacitance at zero bias
Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Gate threshold voltage
Continuous Drain Current	ID	-	-	47	A	Continuous drain current at TJ = 25°C
Pulse Drain Current	IDM	-	-	150	A	Non-repetitive peak drain current
Power Dissipation	PD	-	-	100	W	Maximum power dissipation at TC = 25°C
Junction Temperature	TJ	-	-	150	°C	Maximum junction temperature

Instructions for SIHG47N60E-GE3

1. Handling and Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Use appropriate mounting hardware to secure the device.

3. Electrical Connections:

   • Connect the source (S), drain (D), and gate (G) terminals correctly according to the circuit diagram.
   • Apply sufficient gate drive voltage (typically 10V or higher) to ensure low on-resistance.

4. Operational Guidelines:

   • Do not exceed the maximum ratings provided in the table.
   • Ensure that the junction temperature does not exceed 150°C.
   • For reliable operation, keep within the recommended operating conditions.

5. Testing:

   • Test the device in a controlled environment to verify performance parameters.
   • Use caution when testing high-voltage and high-current capabilities.

(For reference only)